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Si8417DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Foot (Drain)
Steady State
R thJA
R thJF
35
16
45
20
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 72 °C/W.
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
? V DS /T J
? V GS(th) /T J
V GS = 0 V, I D = - 250 μA
I D = - 250 μA
- 12
- 13.3
2.4
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = - 250 μA
- 0.35
- 0.9
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = 5 V
V DS = - 12 V, V GS = 0 V
V DS = - 12 V, V GS = 0 V, T J = 70 °C
V DS ?? 5 V, V GS = - 4.5 V
V GS = - 4.5 V, I D = - 1 A
- 20
0.0174
- 100
-1
- 10
0.021
nA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 1 A
0.0214
0.026
?
V GS = - 1.8 V, I D = - 1 A
0.0270
0.033
Forward Transconductance a
g fs
V DS = - 4 V, I D = - 1 A
8.3
S
Dynamic b
Input Capacitance
C iss
2220
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = - 6 V, V GS = 0 V, f = 1 MHz
865
555
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = - 6 V, V GS = - 5 V, I D = - 1 A
V DS = - 6 V, V GS = - 4.5 V, I D = - 1 A
38
35
7.3
57
53
nC
Gate-Drain Charge
Q gd
5.9
Gate Resistance
Turn-On Delay Time
R g
t d(on)
V GS = - 0.1 V, f = 1 MHz
28
14
21
?
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = - 6 V, R L = 4 ?
I D ? - 1 A, V GEN = - 4.5 V, R g = 6 ?
25
380
240
40
570
360
ns
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Document Number: 73531
S11-1382-Rev. D, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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